unisonic technologies co., ltd 7N20Z power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2012 unisonic technologies co., ltd qw-r502-810.a 7 a , 200v n-channel power mosfet ? description the utc 7N20Z is an n-channel enhancement mode power mosfet providing customers with excellent switching performance and minimum on-state resistance. th is device can also withstand high energy pulse in the avalanche and the commutation mode. the utc 7N20Z is generally applied in low voltage applications, such as dc motor controls, audio amplifiers and high efficiency switching dc/dc converters. ? features * low gate charge: 5.8nc (typ.) * low c rss: 10 pf (typ.) * r ds(on) = 0.58 ? @v gs = 10 v * fast switching * improved dv/dt capability ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 7N20Zl-tn3-r 7N20Zg-tn3-r to-252 g d s tape reel 7N20Zl-tn3-t 7N20Zg-tn3-t to-252 g d s tube note: pin assignment: g: gate d: drain s: source
7N20Z power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-810.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain -source voltage v dss 200 v gate-source voltage v gss 25 v continuous drain current t c =25c i d 7 a pulsed drain current (note 2) i dm 28 a single pulsed avalanche energy (note 3) e as 130 mj power dissipation p d 2.5 w operating junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: 1. 2. 3. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. repetitive rating : pulse width limited by maximum junction temperature l =26mh, i as =7a, v dd =25v, r g =25 ? starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient ja 50 c/w note: when mounted on the minimum pad size recommended (pcb mount) ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 200 v drain-source leakage current i dss v ds =200v, v gs =0v 1 a gate-source leakage current i gss v gs =25v, v ds =0v 10 a on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds ( on ) v gs =10v, i d =3.5a 0.58 0.69 ? dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz 190 250 pf output capacitance c oss 60 75 pf reverse transfer capacitance c rss 10 13 pf switching parameters total gate charge q g v gs =10v, v ds =100v, i d =7a (note 1,2) 5.8 7.5 nc gate source charge q gs 1.4 nc gate drain charge q gd 2.5 nc turn-on delay time t d ( on ) v dd =50v, i d =7a, r g =25 ? (note 1,2) 7 25 ns turn-on rise time t r 24 60 ns turn-off delay time t d ( off ) 13 35 ns turn-off fall-time t f 19 50 ns source- drain diode ratings and characteristics maximum continuous drain-source diode forward current i s 7 a maximum pulsed drain-source diode forward current i sm 28 a drain-source diode forward voltage v sd i s =7a, v gs =0v 1.5 v notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
7N20Z power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-810.a ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
7N20Z power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-810.a ? test circuits and waveforms (cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma gate charge test circuit gate charge waveforms resistive switching test circuit resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
7N20Z power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-810.a ? typical characteristics drain current, i d (a) drain current, i d (a) drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0 1.5 2.5 4 0 0.2 0.4 0.6 0.5 2 3.5 0.8 1 3 v gs =10v, i d =3.5a 1 0.01 drain-source voltage, v ds (v) drain current, i d (a) 10 1 0.1 0.1 10s 60 100ms 100 t a= 25oc maximum safe operation area dc 10 1ms 10ms 100s r d s( o n ) limit utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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